Method for reducing particles deposited onto a semiconductor waf

Details Method for reducing particles deposited onto a semiconductor waf Method for reducing particles deposited onto a semiconductor waf

1997-02-03

1999-08-31

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

20419212, 20419232, 427534, 216 67, 134 12, H01L 2100

Patent

active

059453540

ABSTRACT:
A method for reducing particles (235) during a semiconductor process. A semiconductor substrate (230) is placed into a processing chamber (210). A processing pressure (108) is applied within the chamber (212). A processing power (102) is applied to the chamber. A grid power (104,106) for removing particles (235) is applied to the chamber (212). The processing power (102) is removed. The grid power (106) is removed after the processing power (102).

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