Integrated structure current sensing resistor for power MOS devi

Details Integrated structure current sensing resistor for power MOS devi Integrated structure current sensing resistor for power MOS devi

1995-06-07

1996-02-13

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257154, 257341, 257379, H01L 2704, H01L 2708

Patent

active

054913578

ABSTRACT:
In integrated structure sensing resistor for a power MOS device consists of a doped region extending from a deep body region of at least one cell of a first plurality of cells, constituting a main power device, to a deep body region of a corresponding cell of a second smaller plurality of cells constituting a current sensing device.

Affiliated with

Also associated with

Rating

Integrated structure current sensing resistor for power MOS devi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated structure current sensing resistor for power MOS devi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated structure current sensing resistor for power MOS devi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-242455