Plasma processing method and apparatus

Details Plasma processing method and apparatus Plasma processing method and apparatus

1991-04-09

1992-05-19

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 1, 156646, 156655, 156668, 156345, 20419236, 20429837, B44C 122, B29C 3700

Patent

active

051145294

ABSTRACT:
A plasma processing apparatus includes an oxygen source 14 which provides gas to a plasma generating means 16 for generating plasma in a plasma generating area 40. Gas flows from the plasma generating area 40 to a wafer 30 placed in a processing area 60. A magnetic field generating area 50, located between the plasma generating area 40 and the processing area 60 is created by coils 20 and a power source 21. Charged particles are reflected by the magnetic field and are thus prevented from reaching the wafer 30. A baffle 22 is disposed above the processing area 60 to partly block charged particles.

REFERENCES:
patent: 4512868 (1985-04-01), Fujimura et al.
patent: 4609428 (1986-09-01), Fujimura
patent: 4836902 (1989-06-01), Kalnitsky et al.
patent: 5024748 (1991-06-01), Fujimura
patent: 5032202 (1991-07-01), Tsai et al.
patent: 5061838 (1991-10-01), Lane et al.

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