Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-04-14
1993-11-16
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 48, H01L 2972, H01L 2706
Patent
active
052626652
ABSTRACT:
A semiconductor device having a first stage transistor and a second stage transistor formed on a single substrate is disclosed. The first stage transistor is a multi-source type MOS transistor. The second stage transistor is a multi-base/multi-emitter type transistor. The MOS transistor has a main source connected to the main base of the second stage transistor. The first stage MOS transistor has a sense source connected to the sense base of the second stage transistor. The collector of the second stage transistor and the drain of the first stage MOS transistor are independently formed on the substrate. A load is connected to the collectors. When a voltage is applied to the gate of the first stage transistor, the first stage and second stage transistors are turned on, permitting a collector current, emitter current and sense current to flow into the second stage transistor. The collector current running across the load is detected based on detection of the sense current.
REFERENCES:
patent: 3553541 (1969-04-01), King
patent: 4961006 (1990-10-01), Pace et al.
patent: 5023693 (1991-06-01), Mori et al.
patent: 5061863 (1991-10-01), Mori et al.
Hille Rolf
Kabushiki Kaisha Toyoda Jidoshokki Seisakusho
Williams Alexander D.
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