Method for forming local interconnects using chlorine bearing ag

Details Method for forming local interconnects using chlorine bearing ag Method for forming local interconnects using chlorine bearing ag

1988-11-17

1989-09-05

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156662, B44C 122, C03C 1500, C03C 2506, C23F 102

Patent

active

048635596

ABSTRACT:
A method for etching titanium nitride local interconnects is disclosed. A layer of titanium nitride is formed as a by-product of the formation of titanium silicide by direct reaction; this layer of titanium nitride is present over the titanium silicide layer, as well as over insulators such as oxide. A plasma etch using CCl.sub.4 as the etchant is used to etch the titanium nitride anisotropically, and selectively relative to the titanium silicide due to the passivation of the titanium silicide surface by the carbon atoms of the CCl.sub.4. Excess chlorine concentration may be reduced, further reducing the undesired etching of the titanium silicide, by providing a consumable power electrode, or by introducing chlorine scavenger gases into the reactor. The plasma may be ignited by exposing the gases to a mercury/argon light source, photodetaching electrons from the anions in the gas.

REFERENCES:
patent: 4676866 (1987-06-01), Tang et al.
patent: 4690730 (1987-09-01), Tang et al.
patent: 4784973 (1988-11-01), Stevens et al.
patent: 4793896 (1988-12-01), Douglas

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