Method of integrated circuit fabrication including selective etc

Details Method of integrated circuit fabrication including selective etc Method of integrated circuit fabrication including selective etc

1992-09-30

1994-05-10

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 156654, 156655, 252 791, 252 792, 252 793, H01L 2100

Patent

active

053104579

ABSTRACT:
High etch selectivity of both silicon nitride and silicon with respect to silicon oxide is obtained using an etch bath of phosphoric acid, hydrofluoric acid, and nitric acid. Minimal loading effects are observed and a long bath life is obtained by replenishing the hydroflouric and nitric acids.

REFERENCES:
"Etching Patterns In Amorphous Silicon"; J. Vac. Sci. Tech. A, vol. 4, No. 2, Mar.-Apr. 1986; pp. 239-241.
Technology Topics, "Spin Etcher for Removal of Backside Depositions," by Ernst Gaulhofer, May 1991, pp. 57-58, 219.

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