Surface breakdown reduction by counter-doped island in power mos

Details Surface breakdown reduction by counter-doped island in power mos Surface breakdown reduction by counter-doped island in power mos

1996-02-28

1997-07-08

Levy, Stuart S.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, 257409, 257339, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

056464312

ABSTRACT:
A metal oxide semiconductor field effect transistor with a lightly doped silicon substrate includes an oppositely doped well and oppositely doped source region and oppositely doped drain region with respect to the lightly doped substrate, the improvement comprising at least one counter doped region formed along the surface of the oppositely doped well between the source and drain regions. The substrate comprises a P-substrate, the well comprises an N- well and the counter doped region is doped P; the counterdoped region comprises an island among a plurality of islands between the source region and the drain region. The counterdoped region comprises an island among a plurality of islands between the source region and the drain region.

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