Chemical vapor deposition using inductively coupled plasma and s

Details Chemical vapor deposition using inductively coupled plasma and s Chemical vapor deposition using inductively coupled plasma and s

1997-08-27

1998-10-20

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723I, 118715, 118664, 118712, 20429803, 20429807, 31511151, 156345, C23C 1600

Patent

active

058241582

ABSTRACT:
An ICP (Inductively Coupled Plasma) system is used as a plasma generating means. A CVD process gas is introduced within a vacuum vessel from a gas inlet nozzle, and is then converted into plasma by a high frequency electric field induced within the vacuum vessel by an electromagnetic wave from an antenna. A sample can be located at a position not to be exposed to plasma, and a decomposed product material produced from the CVD process gas by the plasma is deposited on the surface of the sample mounted on a sample stage, thus forming a film. A dielectric viewing port, the antenna and the sample are disposed along the same axial direction such that the directions of the planes thereof correspond to each other, so that the film formation on the surface of the sample within the vacuum vessel can be observed through the transparent dielectric viewing port. When a CVD process gas of a CVD source gas mixed with a rare gas is introduced in the vacuum vessel and a bias voltage is applied to the sample, the film is formed by the CVD source gas and it is simultaneously planarized by sputter etching by the rare gas. When an antenna serving as a target material is disposed within the vacuum vessel, it is possible to eliminate the cutoff of the high frequency power which, has been generated for the inductive coupling from the outside of the vacuum vessel.

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