Method for manufacturing a semiconductor device having a contact

Details Method for manufacturing a semiconductor device having a contact Method for manufacturing a semiconductor device having a contact

1993-11-23

1996-02-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437189, 437200, 437 43, H01L 21336

Patent

active

054911001

ABSTRACT:
A method of manufacturing and a structure of a semiconductor device is disclosed whereby a gate insulating layer, a polycrystalline silicon layer, a tungsten silicide layer and a first insulating layer are formed on a semiconductor substrate. Gates are formed by the removal of the layers by dry etching, wherein the etch rate of the tungsten silicide layer is faster than the other layers, thereby forming an undercut region in the tungsten silicide layer. A second insulating layer is formed on the surface of the resultant structure to form spacers, and a contact window is formed between the gates via an etching process. The second insulating layer portion which forms the spacers need not be thick to prevent etching of the gates when forming the contact window, therefore good step coverage is achieved and reliability of the device is increased.

REFERENCES:
patent: 4740484 (1988-04-01), Norstrom
patent: 4935380 (1990-06-01), Okumura
patent: 4978637 (1990-12-01), Liou
patent: 5089863 (1992-02-01), Satoh et al.
patent: 5262352 (1993-11-01), Woo et al.

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