Complex film overlying a substrate with defined work function

Details Complex film overlying a substrate with defined work function Complex film overlying a substrate with defined work function

1996-04-19

1997-04-08

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257384, 257407, 257412, 257413, H01L 2976, H01L 2994, H01L 31119

Patent

active

056190573

ABSTRACT:
Disclosed is a method and an apparatus for making devices with low barrier height. In fabricating an n-channel and p-channel devices, hemisphere grains, silicon crystal grains and metal silicide crystal grains are formed on a contact-hole or a gate electrode on an insulating film in each semiconductor element, so that it becomes possible to control the work function, to reduce the contact resistance, and to control the threshold voltage V.sub.th.

REFERENCES:
patent: 3830657 (1974-08-01), Farrar
patent: 5084413 (1992-01-01), Fujita et al.
patent: 5177569 (1993-01-01), Koyama et al.
Lightly Impurity Doped (LD) Mo Silicide Gate Technology, Kakumu et al, IEDM85-415, 1985, IEEE.
The Growth of Hemisphere-grain (HSG) on the Polysilicon Surface . . . (17P-ZQ-9), Sugiyama et al., 1991.

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