Semiconductor laser device with plural active layers and changin

Details Semiconductor laser device with plural active layers and changin Semiconductor laser device with plural active layers and changin

1991-12-06

1993-01-05

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 20, 372 33, 372 45, 372 46, 372 96, 372 98, 372102, H01S 319

Patent

active

051777584

ABSTRACT:
A wavelength-tunable semiconductor laser device presenting a large wavelength-tunable range or a very-high-speed modulating semiconductor laser device having a distributed feedback structure including a diffraction grating as in the case of a DBR laser or a DFB laser incorporates therein a plurality of active layers differing from one another in constituent elements or composition ratio or thickness for reducing spectral line widths, while improving single-mode spectral oscillation characteristics.

REFERENCES:
patent: 4653058 (1987-03-01), Akiba et al.
patent: 4719636 (1988-01-01), Yamaguchi
patent: 4788690 (1988-11-01), Akiba et al.
patent: 4899361 (1990-02-01), Numai
patent: 4920542 (1990-04-01), Brosson et al.

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