MOS semiconductor device with high dielectric constant sidewall

Details MOS semiconductor device with high dielectric constant sidewall MOS semiconductor device with high dielectric constant sidewall

1991-07-31

1993-01-05

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257900, H01L 2978, H01L 2906, H01L 2986

Patent

active

051775700

ABSTRACT:
A gate insulating film 22 made of a silicon oxide film is formed on the surface of a substrate 21. A gate electrode 23 is formed on the gate insulating film 22. Insulating films 24 made of silicon nitride films are formed on side walls of the gate electrode 23. Each insulating film 24 has a dielectric constant higher than that of the silicon oxide film.

REFERENCES:
patent: 4488162 (1984-12-01), Jambotkar
patent: 4638347 (1987-01-01), Iyer
patent: 4908326 (1990-03-01), Ma et al.
patent: 4998161 (1991-03-01), Kimura et al.
patent: 5047361 (1991-09-01), Matloubian et al.
patent: 5102816 (1992-04-01), Manukonda et al.
patent: 5108940 (1992-04-01), Williams
patent: 5119152 (1992-06-01), Mizuno

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