Process for production of semiconductor device

Details Process for production of semiconductor device Process for production of semiconductor device

1989-10-26

1991-11-26

Hamilton, Cynthia

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430317, 430323, 430326, 156643, G03F 736

Patent

active

050681699

ABSTRACT:
Disclosed is a process for the production of a semiconductor device, which comprises forming a film of a resist composed of a substance generating an acid catalyst by being irradiated with radiation and a polymer having an Si-containing group that can be eliminated by the acid catalyst, irradiating the resist film with radiations and patterning the irradiated resist film by oxygen reactive ion etching, ECR etching or reactive ion beam etching. This process is advantageously used for preparing a semiconductor device by the two-layer resist method.

REFERENCES:
patent: 4481049 (1984-11-01), Reichmanis et al.
patent: 4551417 (1985-11-01), Suzuki et al.
patent: 4665006 (1987-06-01), Sachdev et al.
patent: 4770977 (1988-09-01), Buiguez et al.
F. Buiguez et al., "A New Positive Optical Resist for BiLayer Resist Systems", Microcircuits Engineering Conference in Berlin, 1984, 12 pages.

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