Process for producing a semiconductor wafer

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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437 61, 437228, 437225, 437974, 148DIG12, 148DIG135, 156633, 156643, B44C 122

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053743296

ABSTRACT:
According to the present invention, there is provided semiconductor wafer, comprises a plurality of non-porous monocrystal layers laminated with interposition of an insulating layer or insulating layers on a substrate.

REFERENCES:
patent: 3954523 (1976-05-01), Magdo et al.
patent: 3997381 (1976-12-01), Wanlass
patent: 4380865 (1983-04-01), Frye et al.
patent: 4459181 (1984-07-01), Benjamin
patent: 4532700 (1985-08-01), Kinney et al.
patent: 4800527 (1989-01-01), Ozaki et al.
patent: 4868140 (1989-09-01), Yonehara
patent: 4968628 (1990-11-01), Delgado et al.
patent: 5010033 (1991-04-01), Tokunaga et al.
patent: 5234535 (1993-08-01), Beyer et al.
patent: 5250460 (1993-10-01), Yamagata et al.
patent: 5258322 (1993-11-01), Sakaguchi et al.
L. Vescan et al., "Low-Pressure Vapor-Phase Epitaxy Silicon on Porous Silicon," Materials Letters, vol.7, No. 3, Sep. 1988, pp. 94-98.
Takai, et al. "Porous Silicon Layers And Its Oxide For The Silicon Insulator Structure", J. App. Phys., vol. 60(1), 1 Jul. 1986, pp. 222, 225.
"Crystalline Quality of Silicon Layer Formed by Fipos Technology," K. Imai et al., Journal of Crystal Growth, vol. 63, No. 3, Oct. 11, 1993, pp. 547-553.
"Electrolytic Shaping of Germanium and Silicon," A. Uhlir, Jr., The Bell System Technical Journal, Mar. 1956, pp. 333-347.
"Formation Mechanism of Porous Silicon Layer by Anodizatioin in HF Solution," T. Unagami, Journal of the Electrochemical Society, vol. 127, Feb., 1980, pp. 476-483.
"A New Dielectric Isolation Method Using Porous Silicon," K. Imai, Solid State Electronics, vol. 24, 1981, pp. 159-164.

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