Semiconductor device with heat dissipation metal layer and metal

Details Semiconductor device with heat dissipation metal layer and metal Semiconductor device with heat dissipation metal layer and metal

1998-08-14

1999-12-28

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With provision for cooling the housing or its contents

257718, 257732, 257702, 257706, 257707, 257719, 361702, 361704, 361705, 361707, 361708, 361711, 361714, 361688, 361687, H01L 2334, H01L 2348

Patent

active

060085371

ABSTRACT:
A method of producing a semiconductor device having a heat dissipating metal layer wherein the number of patterning steps is reduced, laser dicing produces a better profile, and first and second matal layers are prevented from separating from each other, and a semiconductor device produced by the method. The number of patterning steps is reduced by employing a flat exposure step for photoresist with mask alignment, A better appearance is obtained by forming the metal layers which connect the semiconductor devices with each other from a first metal layer having a lower melting point and a second metal layer having a higher melting point and severing the first metal layer and the second metal layer successively, from the first metal layer side. A second metal layer is prevented from peeling by preventing oxidation of the plated feeder layer through plating of the second metal layer.

REFERENCES:
patent: 5338967 (1994-08-01), Kosaki
patent: 5804908 (1998-09-01), Yano
patent: 5872396 (1999-02-01), Kosaki

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