Method for manufacturing semiconductor device capable of improvi

Details Method for manufacturing semiconductor device capable of improvi Method for manufacturing semiconductor device capable of improvi

1997-12-09

1999-12-28

Niebling, John F.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438724, 438743, 438744, 438637, 438638, 438639, 438640, 438672, 438675, H01L 21302

Patent

active

060081368

ABSTRACT:
In a method for manufacturing a semiconductor device, an insulating layer is formed on a refractory metal layer, and a contact hole in the insulating layer by a dry etching process using an etching gas includes one of:
a mixture gas of fluorocarbon and hydrogen;
a mixture gas of hydrofluorocarbon and hydrogen;
a gas of hydrofluorocarbon; and
a fluorocarbon gas except for CF.sub.4.

REFERENCES:
patent: 4522681 (1985-06-01), Gorowitz et al.
patent: 4582563 (1986-04-01), Hazuki et al.
patent: 5702982 (1997-12-01), Lee et al.

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