Particulate-free epitaxial process

Details Particulate-free epitaxial process Particulate-free epitaxial process

1994-03-14

1994-12-20

Straub, Gary P.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With pretreatment or preparation of a base

117 90, 117 94, 134 1, 361212, 4272551, 437173, 437225, C30B 2306, C30B 2510

Patent

active

053738063

ABSTRACT:
Particles and particle-generated defects during gas phase processing such as during epitaxial deposition are substantially decreased by the process of controlling the various particle transport mechanisms, for example, by applying low level radiant energy during cold purge cycles in barrel reactors.

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Logar and Borland, Solid State Technology, Jun. 1985, pp. 133-136.

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