Method for hydrogen plasma down-flow processing and apparatus th

Details Method for hydrogen plasma down-flow processing and apparatus th Method for hydrogen plasma down-flow processing and apparatus th

1996-08-20

1999-12-28

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

H05H 100

Patent

active

060076712

ABSTRACT:
The present invention relates to a hydrogen plasma down-flow processing method and a hydrogen plasma down-flow processing apparatus and has an object to provide a hydrogen plasma down-flow processing method and a hydrogen plasma down-flow processing apparatus ensuring that it is possible to make it difficult for hydrogen atoms to deposit and recombine on the internal wall of the apparatus. High speed hydrogen plasma processing can be realized by improving transfer efficiency of hydrogen atoms to the processing chamber. Moreover hydrogen plasma efficiency can also be improved by reducing influence of oxidation species such as OH radical and oxygen atom concentrations can be controlled as desired by keeping the change in hydrogen atom concentration small. The apparatus includes a vacuum chamber of which at least a part of the structural members exposed to a vacuum is made by silicon oxide. In a hydrogen plasma down-flow processing method, whereby the processed object is processed in the down-flow area, the plasma is generated from the gas including at least hydrogen. A processing object is processed by heating at least a part of the silicon oxide region to 443.degree. C. or higher.

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