Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-01-14
1994-06-28
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257390, H01L 2348, H01L 2940, H01L 2944, H01L 2952
Patent
active
053249755
ABSTRACT:
For increasing pattern density of cell regions in a semiconductor memory device including an array of dynamic memory cells, the cell regions for cell transistor pairs are provided in a semiconductor substrate so as to be crossed by one desired bit line and two word lines adjacent thereto, and the patterns of cell regions have a same direction. Contacts for electrically connecting each bit line to common regions of cell transistor pairs are provided on respective bit lines every desired pitch at positions where each bit line intersects with cell regions. These contacts of adjacent bit lines are successively shifted in a bit line direction by approximately 1/2.sup.n (n is natural numbers greater than or equal to 2) pitch.
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Kumagai Jumpei
Sawada Shizuo
James Andrew J.
Kabushiki Kaisha Toshiba
Meier Stephen D.
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