Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-02-23
1994-10-18
Limanek, Robert
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257314, H01L 2978
Patent
active
053571347
ABSTRACT:
A tunnel oxide film 12 is formed on a silicon substrate 11 and a polysilicon film 16 is deposited thereon. Then, an impurity such as phosphorus or the like is doped into the polysilicon film 16 and the polysilicon film 16 is subjected to thermal oxidation. As a result, a charge trap film 15 in which silicon grains 13 in the inside of the polysilicon film 16 are coated with a thermal oxide film 14 is obtained. If necessary, a multilayer charge trap film 15 is obtained by repetition of the foregoing steps. Since the thermal oxide film 14 has an excellent insulating property compared with an oxide film obtained by a sputtering or CVD method and therefore the charge trap film 15 has a high dielectric withstanding voltage. Further, since the silicon grains 13 coated with the thermal oxide film 14 have a deep trap level, an improved signal charge holding property can be obtained. Thereby, it is provided a nonvolatile semiconductor storage device comprising a charge trap film having a deep trap level and an improved dielectric withstanding voltage.
REFERENCES:
patent: 3878549 (1975-04-01), Yamazaki et al.
patent: 4162176 (1979-07-01), Tsuda
patent: 4282540 (1981-08-01), Ning et al.
patent: 4735919 (1988-04-01), Faraone
patent: 5031010 (1991-07-01), Mikata et al.
Limanek Robert
Rohm & Co., Ltd.
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