Method of fabrication bipolar transistor with improved base coll

Details Method of fabrication bipolar transistor with improved base coll Method of fabrication bipolar transistor with improved base coll

Filed on

1982-08-09

Date issued

1985-07-30

Examiner

Powell, William A.

Patent Class

Adhesive bonding and miscellaneous chemical manufacture

SubClass

Delaminating processes adapted for specified product

SubSubClass

Delaminating in preparation for post processing recycling step

Other Related Categories

29576W, 29580, 148187, 148190, 156653, 156657, 1566591, 156662, 357 34, 357 49, 427 85, 427 86, H01L 21306, H01L 744, H01L 2972, H01L 700

Type

Patent

Status

active

Patent number

045320039

Description

ABSTRACT:
A bipolar transistor having a first and second selective collector region extending from a buried high impurity region to the surface of the substrate. The first selective region defines the plane breakdown voltage to be equivalent to the planar breakdown voltage of the base-collector junction and the selective regions and the buried layer form a low series resistance collector.

REFERENCES:
patent: 3484308 (1969-12-01), Lesk
patent: 3722079 (1973-03-01), Beasom
patent: 3814997 (1974-06-01), Takahashi et al.
patent: 3909119 (1975-09-01), Wolley
patent: 4290831 (1981-09-01), Ports

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