Multilayer planarizing structure for lift-off technique

Details Multilayer planarizing structure for lift-off technique Multilayer planarizing structure for lift-off technique

1984-04-10

1985-07-30

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156651, 156652, 156653, 156655, 156657, 1566591, 156668, 427 90, 430315, 430317, B44C 122, C03C 1500, C03C 2506, B29C 1708

Patent

active

045320020

ABSTRACT:
An improved method of forming a patterned layer of metallization on a substrate having topographical features is provided. A layer of a polymeric lift-off material is initially spin-coated onto the substrate, and a layer of a polymeric planarizing material spin-coated thereover. The dry etch rate of the lift-off layer is at least 1.2 times faster than that of the planarizing layer thereby forming a reverse slope wall profile in openings etched through both layers. A patterned hardmask layer is suitably used to dry etch the planarizing and lift-off layers, preferably in an oxygen-containing plasma. A layer of metallization is then deposited thereon. The metal in the openings is discontinuous from that deposited over the hardmask because of the reverse slope wall profile of the openings in the planarizing layers. The structure is then contacted with an organic solvent which penetrates to the base of the lift-off layer, again due to the reverse slope wall profile. The entire structure can thereupon be lifted from the substrate leaving the patterned metallization.

REFERENCES:
patent: T103203 (1983-07-01), Carr et al.
patent: 4337115 (1982-06-01), Ikeda et al.
patent: 4352870 (1982-10-01), Howard et al.
patent: 4367119 (1983-01-01), Logan et al.
patent: 4370405 (1983-01-01), O'Toole et al.
patent: 4372034 (1983-02-01), Bohr

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