Gold-tantalum-titanium/tungsten alloy contact for semiconductor

Details Gold-tantalum-titanium/tungsten alloy contact for semiconductor Gold-tantalum-titanium/tungsten alloy contact for semiconductor

1979-09-04

1981-11-10

James, Andrew J.

357 65, 357 67, 357 15, H01L 2348, H01L 2946, H01L 2954

Patent

active

043001491

ABSTRACT:
In a conductor pattern for integrated circuits, the use of barrier layers of TiW and selected transition metals between gold and a silicon substrate, with the transition metal containing a supplemental barrier region or stratum of an intermetallic formed between it and the gold. Also comprehended is the use of a platinum silicide layer between the TiW layer and silicon for Schottky Barrier Diodes.

REFERENCES:
patent: 3769688 (1973-11-01), Kessler et al.
patent: 4104697 (1978-08-01), Kendall et al.
patent: 4141022 (1979-02-01), Sigg et al.
patent: 4166279 (1979-08-01), Gangulee et al.
patent: 4171528 (1979-10-01), Kling
patent: 4179533 (1979-12-01), Christou et al.
patent: 4214256 (1980-07-01), Dalal et al.

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