Capacitor and manufacturing method thereof

Details Capacitor and manufacturing method thereof Capacitor and manufacturing method thereof

1995-11-16

1996-10-22

Ledynh, Bot L.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, 437919, 361305, 361313, 361320, 3613215, H01G 406, H01G 4008, H01G 420, H01G 700

Patent

active

055683525

ABSTRACT:
A capacitor in a semiconductor device and a manufacturing method for the capacitor are provided using a triple film including a Ti layer, a TiN layer, and a Ta layer. The capacitor has a first insulating film formed on the surface of a semiconductor substrate, the first insulating film having a center hole and at least one step between the center hole and the rest of the first insulating film, a spacer formed on the inner wall of the contact hole, a first conductive layer filling the contact hole, a triple film formed on the center of the first insulating film, a second conductive layer formed on the triple film, a second insulating film formed on the resultant structure, and a third conductive layer formed on the second insulating film. The Ta layer is placed in between the second conductive layer and both the Ti layer and the TiN layer to prevent the production of a metal oxide and nitrogen gas from a reaction between oxygen and the Ti and TiN layers.

REFERENCES:
patent: 5187638 (1993-02-01), Sandhu et al.
patent: 5471364 (1995-11-01), Summerfelt et al.

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