Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-04-27
1996-10-22
Limanek, Robert R.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257644, 257650, H01L 2978
Patent
active
055679706
ABSTRACT:
A ROM device includes cells with buried bit lines in a semiconductor substrate. A thin insulating layer covers the substrate has closely spaced, parallel, word lines formed thereon arranged orthogonally relative to the bit lines. The word lines are covered with reflowed glass insulating layers about 2500.ANG. thick. The glass insulating layers comprise a sublayer of undoped glass and an overlayer of doped glass, the underlayer about 500.ANG.-1500.ANG. thick and the overlayer about 1000.ANG.-1500.ANG. thick. An etched, patterned metal layer is formed on the glass insulating layer. The overlayer has been substantially removed by etching where the metal layer has been etched. An ion implantation pattern has been implanted into the substrate adjacent to the conductive lines. The device has been passivated. The implanted impurity ions having been activated by annealing the device.
REFERENCES:
patent: 4998157 (1991-03-01), Yokoyama et al.
patent: 5081052 (1992-01-01), Kobayashi et al.
Chung Chen-Hui
Hsue Chen-Chiu
Sheu Shing-Ren
Hardy David
Limanek Robert R.
United Microelectronics Corporation
Wright William H.
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