Process for forming via holes having sloped walls

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156644, 156646, 156655, 156668, 204192E, B44C 122, C03C 1500, C03C 2506, B29C 1708

Patent

active

044824270

ABSTRACT:
A dry process for forming via holes with sloped walls by oxygen reactive ion etching through a perforated mask.

REFERENCES:
patent: 4357203 (1982-11-01), Zelez
Bondur and Clark, "Plasma Etching for SiO.sub.2 Profile Control", Solid State Technology, pp. 122, Apr. 1980.

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