Method of forming gate spacer to control the base width of a lat

Details Method of forming gate spacer to control the base width of a lat Method of forming gate spacer to control the base width of a lat

1995-11-13

1996-10-22

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 31, 437 59, 437 62, 437 34, 437917, 148DIG9, 148DIG96, H01L 21265

Patent

active

055676316

ABSTRACT:
A process has been developed in which narrow base width, lateral bipolar junction transistors, and narrow channel length MOSFET devices, can be simultaneously fabricated, using a silicon on insulator approach. Insulator sidewall spacer and gate processing is used to produce narrow base widths for enhanced collector--base device characteristics, in terms of transistor gain, switching speeds and junction breakdowns.

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patent: 5426062 (1995-06-01), Hwang
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