Method of making ESD protection device structure for low supply

Details Method of making ESD protection device structure for low supply Method of making ESD protection device structure for low supply

1996-05-02

1997-10-07

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 44, 437 58, 437904, H01L 218234

Patent

active

056747616

ABSTRACT:
A method for forming an ESD protection device, with reduced junction breakdown voltages, while simultaneously forming an integrated circuit, containing FET devices, has been developed. This invention features forming a large area, ESD protection diode, by using a first ion implantation step, of a specific conductivity type, also used for the heavily doped source and drain regions of attached FET devices. After photoresist processing, used to mask the attached FET devices, a second ion implantation step, opposite in conductivity type then the first implant, is used to complete the ESD protection diode, for the ESD protection device. This large area diode reduces junction breakdown voltage, while allowing ESD current to be discharged more efficiently then for smaller ESD protection counterparts.

REFERENCES:
patent: 5246872 (1993-09-01), Mortensen
patent: 5262344 (1993-11-01), Mistry
patent: 5272097 (1993-12-01), Shiota
patent: 5374565 (1994-12-01), Hsue et al.
patent: 5529941 (1996-06-01), Huang

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