Method of making depleted gate transistor for high voltage opera

Details Method of making depleted gate transistor for high voltage opera Method of making depleted gate transistor for high voltage opera

1995-04-04

1996-01-02

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 34, 437 46, H01L 218238

Patent

active

054808308

ABSTRACT:
A process for fabricating MOSFET structures, using one gate oxide thickness, but resulting in both low and high operating voltage devices, has been developed. A fabrication sequence is described illustrating the process that allows the formation of a depleted gate polysilicon structure, resulting in high operating voltages, and doped polysilicon gate structures, resulting in lower operating voltages.

REFERENCES:
patent: 4249968 (1981-02-01), Gardiner et al.
patent: 5047358 (1991-09-01), Kosiak et al.
patent: 5432114 (1995-07-01), O
patent: 5438005 (1995-08-01), Jang

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