Semiconductor device with doped electrical breakdown control reg

Details Semiconductor device with doped electrical breakdown control reg Semiconductor device with doped electrical breakdown control reg

1992-07-17

1993-07-27

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257328, H01L 2910, H01L 2978, H01L 2968

Patent

active

052314740

ABSTRACT:
A field-effect, power-MOS transistor wherein a region under the gate contact pad is specially doped with a dopant that is electrically compatible with that in the transistor's channel to obviate problems of electrical breakdown in that region.

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patent: 4499652 (1985-09-01), Shrivastava
patent: 4599118 (1986-07-01), Han et al.
patent: 4656492 (1987-04-01), Sunami et al.

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