Plasma source and method of manufacturing

Details Plasma source and method of manufacturing Plasma source and method of manufacturing

1992-04-15

1993-07-27

Mis, David

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

315 50, H01J 724, H01J 726

Patent

active

052313344

ABSTRACT:
A plasma source for generating a plasma in a chamber in conjunction with a radio frequency generator is described. The plasma source comprises a coil spiral, at least one insulator and at least one capacitor. The coil spiral conducts the radio frequency wave from the radio frequency generator and induces a plasma in the chamber. It comprises at least two segments. Each insulator and capacitor couple two adjacent segments of the coil spiral together.

REFERENCES:
patent: 4948458 (1990-08-01), Ogle
Kitagawa, Akio et al. "Enhanced Growth of Silicon Dioxide Films by Parallel-Resonant RF Plasmas", Japanese Journal of Applied Physics, vol. 29, No. 7, Jul. 1990, 1178-1187.
Perry, A. J. et al., "The Application of The Helicon Source To Plasma Processing", J. Vac. Sci. Technol. B, vol. 19, No. 2, Mar./Apr. 1991, pp. 310-317.
Shirakawa, T. et al., "RF Plasma Production At Ultralow Pressures with Surface Magnetic Confinement", Japanese Journal Of Applied Physics vol. 29, No. 6, Jun. 1990, pp. 1015-1018.

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