Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-06-18
1993-07-27
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257378, 257691, H01L 2702
Patent
active
052313000
ABSTRACT:
In a semiconductor integrated circuit, a digital circuit section and an analog circuit section are formed on a substrate. A pair of first power source lines connects a circuit element in the digital circuit section to a power source, while a pair of second power source lines connects a substrate region in the digital circuit section to the power source. The pair of second power source lines is formed separately from the pair of first power source lines in the digital circuit section. The substrate region in the digital circuit section is surrounded by a guard ring well, to which one of the pair of second power source lines is connected.
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patent: 5014105 (1991-05-01), Hata et al.
patent: 5060044 (1991-10-01), Tomassetti
patent: 5079613 (1992-01-01), Sawada et al.
patent: 5099239 (1992-03-01), Bruce et al.
V. L. Rideout an dL. Wissel, "Selective Substrate Biasing for CMOS Circuits", IBM Technical Disclosure Bulletin, vol. 27, No. 6, p. 3344, Nov. 1984.
Ishikawa Kazuo
Terashima Kaoru
Bowers Courtney A.
James Andrew J.
Kabushiki Kaisha Toshiba
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