Process for forming CVD film and semiconductor device

Details Process for forming CVD film and semiconductor device Process for forming CVD film and semiconductor device

1990-12-14

1993-07-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437238, 437982, 437985, 156646, 156653, 156654, 156657, H01L 2102

Patent

active

052310582

ABSTRACT:
In a process for forming a CVD film, a polysiloxane compound having at least two silicon-oxygen bonds is reacted with ozone to form an SiO.sub.2 film. If desired, the reaction may be effected in the presence of a gas containing an impurity mixed with the polysiloxane compound and ozone to form a PSG, BSG or BPSG film. In a semiconductor device, the SiO.sub.2 film, or the PSG, BSG or BPSG film is used as a planarizing film, an interlayer insulating film, or a cover insulating film.

REFERENCES:
patent: 5028566 (1991-07-01), Lagendijk
Chemical Abstracts 112(8): 67888v (1989).
NEC Research and Development, No. 94, Jul. 1989, Tokyo JP pp. 1-7.

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