Method for the production of SiC single crystals by using a spec

Details Method for the production of SiC single crystals by using a spec Method for the production of SiC single crystals by using a spec

1992-02-28

1993-07-27

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148DIG148, 148 331, 423346, 427249, 4272551, 437 93, 437100, H61B 21205

Patent

active

052307689

ABSTRACT:
There is provided a method for the production of a silicon carbide single crystal, which includes the steps of: providing a silicon single-crystal substrate having a growth plane with a crystal orientation inclined from the [100] direction toward an off-direction, wherein the crystal orientation is defined by a deviation angle .theta. of 5 to 40 degrees, as measured from the [011] direction toward the [011] direction, and a tilt angle .phi. of 1 to 7 degrees, as measured from the [100] direction toward the off-direction; and growing a silicon carbide single crystal on the substrate.

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