Semiconductor integrated circuit manufacturing method and device

Details Semiconductor integrated circuit manufacturing method and device Semiconductor integrated circuit manufacturing method and device

1998-03-25

2000-04-18

Niebling, John F.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

438761, 438763, H01L 2131, H01L 21469

Patent

active

060515090

ABSTRACT:
A manufacturing method produces a semiconductor IC device which can maintain a low power consumption for electronic circuits and form gate-isolation layers of different thicknesses without increasing the manufacturing cost. The semiconductor IC device has gate-isolation layers of different thicknesses on the same semiconductor substrate surface. To form such gate-isolation layers, a silicon dioxide layer is formed in first and second regions. The dopant-concentration is adjusted in silicon dioxide layer that is to have a thickness different from the above silicon dioxide layer thickness in the second region B. A carbon-containing semiconductor layer is selectively formed in either the first region or the second region. Therefore, there is no need for additional steps for forming silicon dioxide layers of different thicknesses in the first region and in the second region. In addition, a carbon-containing semiconductor layer is selectively formed on desired areas of the semiconductor substrate where thinner oxide layer is to be formed. The semiconductor substrate is oxidized successively to have oxide layers of different thickness on the surface of the substrate in one step.

REFERENCES:
patent: 5756391 (1998-05-01), Tsuchiaki
patent: 5804259 (1998-09-01), Robles
patent: 5885861 (1999-03-01), Gardner et al.
patent: 5915180 (1999-06-01), Hara et al.
J. Electrochem. Soc., vol. 143, No. 7, Jul. 1996, pp. 2378-2387, M. Tsuchiaki et al., "Experimental Study of the Impact of Carbon incorporated on silicon surface."
J. Electrochem. Soc., vol. 143, No. 9, Sep. 1996, pp. 2965-2992, M. Tsuchiaki et al., "A Detailed Study on the Effects Found in the above paper."

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