Method of forming wirings

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438622, 438625, 438629, 438637, 438643, 438648, 438653, 438656, 438660, 438663, 438688, H01L 214763

Patent

active

060514906

ABSTRACT:
A method of forming wirings which includes forming a film of a silicon-containing metal layer at a high temperature on an underlying metal, thereby forming a silicon alloy layer which includes the underlying metal and the silicon-containing metal during film formation. In a case of forming wirings by a silicon-containing metal layer, occurrence of Si nodules can be eliminated to obtain wirings of high reliability.

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