Plasma etching method and method of manufacturing liquid crystal

Details Plasma etching method and method of manufacturing liquid crystal Plasma etching method and method of manufacturing liquid crystal

1996-08-05

2000-04-18

Morris, Terrel

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 75, 216 64, C23F 110

Patent

active

060511508

ABSTRACT:
An etching method includes the steps of supplying, to the gap between two powered electrodes, a gas capable of discharge which may be produced by adding water to helium and mixing a substance of chlorine, bromine or iodine or a compound containing chlorine, bromine or iodine; applying a RF voltage to the electrodes to produce gaseous discharge between the electrodes and the grounded stage having a material to be processed, thereon i.e., a glass substrate, at a pressure close to or at atmospheric pressure; and exposing the surface of the glass substrate to active species of the gas capable of discharge, which are produced by the discharge, to thus etch an ITO film on the surface of the substrate. The method is capable of removing a metal or a metallic compound containing a metal such as Au, Al, In, Sn or the like, which cannot be easily removed by conventional etching under atmospheric pressure, by producing a compound having a low boiling point or sublimation point and vaporizing it.

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