Integrated circuits and SRAM memory cells

Details Integrated circuits and SRAM memory cells Integrated circuits and SRAM memory cells

1996-07-12

1998-01-06

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257534, 257528, 257536, 257904, H01L 2170

Patent

active

057058431

ABSTRACT:
SRAM and other integrated circuitry. In one aspect the invention includes an integrated circuit comprising: a) a first electrically insulating material layer having an outer surface; b) an electrically insulative pillar ring extending substantially vertically outward of the first layer, the pillar ring having opposing inner and outer substantially vertical side surfaces; c) an elongated resistor, the resistor comprising a layer of semiconductive material which serpentines over the first layer outer surface and the pillar ring vertical surfaces to form a container shape resistor within the pillar ring; d) an electrically conductive first node in electrical connection with the resistor on the inside of the insulative pillar ring; and e) an electrically conductive second node in electrical connection with the resistor on the outside of the insulative pillar ring.

REFERENCES:
patent: 3134912 (1964-05-01), Evans
patent: 5177030 (1993-01-01), Lee et al.
patent: 5385858 (1995-01-01), Manabe

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