Horizontal MOSFET

Details Horizontal MOSFET Horizontal MOSFET

1997-03-07

1998-01-06

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257335, 257473, 2571449, 257343, 257358, 257360, 257361, 257363, 257373, 257379, 257281, H01L 2978, H01L 2910, H01L 29784

Patent

active

057058423

ABSTRACT:
A horizontal MOSFET prevents itself from breakdown caused by an avalanche current which flows to a base of a parasitic bipolar transistor when avalanche breakdown of a diode formed between a drain and a substrate occurs. A current path, comprised of a back electrode or a layer with high impurity concentration, is disposed on the side of a back surface of a semiconductor substrate. This current path reduces the base current of the parasitic transistor. Due to this, heat generation caused by an operation of the parasitic transistor is suppressed, and the avalanche withstand capability of the MOSFET is improved corresponding to reduction of the internal resistance component of the MOSFET.

REFERENCES:
patent: 4992844 (1991-02-01), Yakushiji
patent: 5077586 (1991-12-01), Quessada
patent: 5208471 (1993-05-01), Mori et al.
patent: 5284981 (1994-02-01), Lilja et al.
patent: 5338964 (1994-08-01), Bernier
patent: 5357120 (1994-10-01), Mori
patent: 5432370 (1995-07-01), Kitamura et al.

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