Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1996-09-05
1998-01-06
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257267, 257284, H01L 310312
Patent
active
057058300
ABSTRACT:
A static induction transistor includes a substrate and a drift layer with different doping levels. At least two mesas are formed on the drift layer and a heavily doped region is positioned on a top surface of each of the mesas. A gate contact extends along a bottom of a recess between the mesas and along a side of each of the mesas forming the recess. The gate contact also extends along a portion of the top surface of each of the mesas. In one embodiment of the invention, a notch is formed in the top surface of the mesas between the gate contact and the heavily doped region.
REFERENCES:
patent: 4199771 (1980-04-01), Nishizawa et al.
patent: 4375124 (1983-03-01), Cogan
patent: 4404575 (1983-09-01), Nishizawa
patent: 4470059 (1984-09-01), Nishizawa et al.
patent: 4476622 (1984-10-01), Cogan
patent: 4755859 (1988-07-01), Suda et al.
patent: 5202273 (1993-04-01), Nakamura
patent: 5216275 (1993-06-01), Chen
patent: 5382822 (1995-01-01), Stein
patent: 5391897 (1995-02-01), Nonaka
patent: 5434435 (1995-07-01), Baliga
patent: 5434447 (1995-07-01), Miyashita et al.
Agarwal Anant K.
Brandt Charles D.
Clarke Rowland C.
Siergiej Richard R.
Northrop Grumman Corporation
Prenty Mark V.
Sutcliff Walter G.
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