Lateral field effect transistor

Details Lateral field effect transistor Lateral field effect transistor

1995-11-01

1997-05-27

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257141, 257343, 257401, H01L 2974, H01L 2976

Patent

active

056335253

ABSTRACT:
A lateral field effect transistor includes a semiconductor substrate, a source region further with source region stripes formed on the semiconductor substrate, and a drain region with drain region stripes formed on the semiconductor substrate and spaced laterally from the source region stripes. In addition, the lateral field effect transistor includes a source electrode having a first source electrode layer connected to the source region via a source contact and a second source electrode layer straddling the source region stripes and the drain region stripes. The first source electrode layer and the second source electrode layer are separated by an inter-layer insulation film and connected via a source connection hole formed through the inter-layer insulation film. In addition, the lateral field effect transistor includes a drain electrode having a first drain electrode layer connected to the drain region via a drain contact and a second drain electrode layer straddling the source region stripes and the drain region stripes. The first drain electrode layer and the second drain electrode layer are separated by an inter-layer insulation film and connected via a drain connection hole formed through the inter-layer insulation film. The lateral field effect transistor also includes a source pad disposed on the second source electrode layer and a drain pad disposed on the second drain electrode layer.

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