Process for forming fine patterns for a semiconductor device uti

Details Process for forming fine patterns for a semiconductor device uti Process for forming fine patterns for a semiconductor device uti

1996-06-06

1998-01-06

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430314, 430316, 430328, 430329, G03F 7095, G03F 740

Patent

active

057053197

ABSTRACT:
There are disclosed processes for forming fine patterns on a semiconductor substrate to a lesser degree than the resolving power of a step and repeat used, thereby improving the degree of integration of the semiconductor device. The process comprises the steps of: forming a first light-exposure mask and a second light-exposure mask with interlaced patterns selected from a plurality of fine patterns to be formed on a semiconductor substrate; coating an organic material layer on the semiconductor substrate; patterning the organic material layer by use of the first light-exposure mask, to form organic material layer patterns; forming a photosensitive film over the organic material layer patterns; and patterning the photosensitive film by use of the second light-exposure mask to form photosensitive film patterns, in such a way that each of photosensitive film patterns is interposed between two adjacent organic material layer patterns.

REFERENCES:
patent: 4828961 (1989-05-01), Law et al.
patent: 5024919 (1991-06-01), Yamauchi et al.
patent: 5126006 (1992-06-01), Cronin et al.

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