Method of processing semiconductor wafers using a contact etch s

Details Method of processing semiconductor wafers using a contact etch s Method of processing semiconductor wafers using a contact etch s

1991-12-17

1993-04-27

Quach, T. N.

Fishing, trapping, and vermin destroying

437195, 437200, 437228, 437 41, 156656, 156657, 148DIG19, H01L 21283, H01L 21311

Patent

active

052061876

ABSTRACT:
A method of processing a semiconductor wafer comprises: a) fabricating a wafer to define a plurality of conductively doped active regions, the active regions having outwardly exposed surfaces positioned at varying elevations of the wafer; b) providing a layer of transition metal oxide elevationally above the active regions; c) applying an insulating dielectric layer elevationally above the transition metal oxide layer; d) etching selected portions of the insulating dielectric layer over different elevation active areas using an etch chemistry which is highly selective to the transition metal oxide and using the transition metal oxide as an effective etch stop enabling etching of the insulating dielectric layer in a single etch step to adjacent selected active regions which are at different elevations; and e) etching the transition metal oxide from the selected portions and upwardly exposing selected active regions.

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"Selective Oxidation of Titanium While Forming . . . ", IBM Tech. Disc. Bull., vol. 27, No. 10A, Mar. 1985, pp. 5870-5875.

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