Plasma etching method

Details Plasma etching method Plasma etching method

1996-02-02

1997-01-21

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566461, 1566621, 252 791, H01L 2100, C09K 1300

Patent

active

055956270

ABSTRACT:
A plasma etching apparatus has a lower electrode for supporting a semiconductor wafer in a processing room, an upper electrode opposite to the lower electrode, and an RF power supply for applying an RF power across the upper and lower electrodes. An SiN layer as an underlayer having a shoulder portion, and an SiO.sub.2 layer covering the SiN layer are disposed on the wafer. A contact hole is formed in the SiO.sub.2 layer by etching so as to expose the shoulder portion of the SiN layer. A processing gas contains C.sub.4 F.sub.8 and CO. To set the etching selection ratio of SiO.sub.2 /SiN, the discharge duration of each part of the processing gas is used as a parameter. The progress of dissociation of C.sub.4 F.sub.8 is controlled by selecting the discharge duration. The discharge duration is determined by the residence time of each part of the processing gas and the application time of an RF power.

REFERENCES:
patent: 5338399 (1994-08-01), Yanagida

Affiliated with

Also associated with

Rating

Plasma etching method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma etching method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma etching method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2321783