Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-07-03
1998-07-28
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438613, 438108, 257778, 22827217, H01L 2144
Patent
active
057862710
ABSTRACT:
A semiconductor package has a wiring circuit containing a conductive terminal formed on a first face of a substrate and a flat external connecting terminal electrically connected to the wiring circuit formed on a second face. An electrode pad is formed on a first face of a semiconductor chip. This semiconductor chip is mounted on the substrate with its first face down to oppose the first face of the substrate. A ball bump as a protruded electrode formed on the conductive terminal of the substrate and a ball bump as a protruded electrode formed on the electrode pad of the semiconductor chip are connected by solid phase diffusion. And, a sealing resin layer is formed in the space between the substrate and the semiconductor chip opposed to each other with a second face of the semiconductor chip exposed.
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Aoki Hideo
Iwasaki Hiroshi
Ohida Mitsuru
Kabushiki Kaisha Toshiba
Niebling John
Turner Kevin F.
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