Semiconductor device with element isolation film

Details Semiconductor device with element isolation film Semiconductor device with element isolation film

1997-05-21

2000-01-25

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257395, 257396, 257397, 257398, H01L 2976

Patent

active

060181850

ABSTRACT:
The semiconductor device comprises a semiconductor substrate having an element region, an element isolation film formed on the semiconductor substrate so as to surround the element region, a gate portion crossing the element region and extending over the semiconductor substrate, the gate portion comprising at least a gate insulation film formed on the semiconcuctor substrate and a gate electrode formed on the gate insulation film, and source/drain regions formed on the surface of the element regions on both sides of the gate portion, wherein an upper surface of the element isolation film is formed in substantially the same plane as an upper surface of the gate portion.

REFERENCES:
patent: 3849216 (1974-11-01), Salters
patent: 4224733 (1980-09-01), Spadea
patent: 4384301 (1983-05-01), Tasch, Jr. et al.
patent: 4504333 (1985-03-01), Kurosawa
patent: 4697199 (1987-09-01), De Graaff et al.
patent: 4918510 (1990-04-01), Pfiester
patent: 5777370 (1998-07-01), Omid-Zohoor et al.
patent: 5789792 (1998-08-01), Tsutumi

Affiliated with

Also associated with

Rating

Semiconductor device with element isolation film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with element isolation film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with element isolation film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2317713