Structure of manufacturing an electrostatic discharge protective

Details Structure of manufacturing an electrostatic discharge protective Structure of manufacturing an electrostatic discharge protective

1998-10-01

2000-01-25

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 257362, 257359, H01L 2362

Patent

active

060181834

ABSTRACT:
A structure of manufacturing an electrostatic discharge protective circuit for SRAM. In the structure, a MOS transistor is coupled between an input port and an internal circuit, and an input bonding pad is coupled to the input port and the internal circuit. Furthermore, the source of the MOS transistor is connected to the gate of the MOS transistor by a polysilicon layer which is coupled to a potential line. A via connects the drain of the MOS transistor to a metal layer. Then, the metal layer is coupled to the input bonding pad.

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