Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-12-23
2000-01-25
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 68, 257 71, 257336, 257374, 257382, 257509, 257510, 257408, H01L 2976
Patent
active
06018180&
ABSTRACT:
An integrated circuit transistor and a method for making the same are provided. The transistor is resistant to junction shorts due to the overetch of local interconnect trenches. The transistor includes a source/drain region with a first junction and a second junction that is located deeper than the first junction in the portion of the active area susceptible to the overetch junction short phenomena. The second junction is established by ion implantation through a mask that is patterned to create an opening corresponding to the intersection of the layouts of the active area and the local interconnect trench. Using this method, the second junction is only established where needed to prevent shorting and does not impede transistor performance.
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Cheek Jon D.
Fulford H. Jim
Wristers Derick J.
Abraham Fetsum
Advanced Micro Devices , Inc.
Honeycutt Timothy M.
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