Method of manufacturing a semiconductor device using an insulate

Details Method of manufacturing a semiconductor device using an insulate Method of manufacturing a semiconductor device using an insulate

1995-07-19

2000-01-25

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438154, 438163, 438525, H01L 2184

Patent

active

060177837

ABSTRACT:
A novel structure of TFT is described. In the structure of TFT, an anodic oxidation film, which is a material composing a gate electrode, is laid at the side of gate electrode. An electrode, which is connected to a source, drain region, is in contact with the upper surface and the side of the source, drain region, and extended on the upper surface of an insulation film which is laid on the gate electrode. In the preparation process of TFT, it can be completed by using only two sheets of mask.

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