Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-11-25
2000-01-25
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438479, H01L 2184
Patent
active
060177810
ABSTRACT:
According to a method of manufacturing a thin film transistor (TFT), amorphous silicon is formed by ion-implanting either silicon or nitrogen into a region of polysilicon while a region located at the sidewall of a gate electrode is selectively left using the stepped portion of the gate electrode. Then, a heat treatment is applied to convert the amorphous silicon into polysilicon with the remaining polysilicon as a seed crystal. As a result, polysilicon having crystal grains of great grain size can be formed in uniform. Thus, the electric characteristics of a TFT can be improved with no difference in the electric characteristics between each TFT.
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Polycrystalline Si Thin-Film Transistors Fabricated at 800.degree. C: Effects of Grain Size and {110} Fiber Texture, K. T. Y. Kung et al., J. Apl. Phys. 62 (4), Aug. 15, 1987, pp. 1503-1509.
Influence of .sup.16 O, .sup.12 C, .sup.14 N, and Noble Gases on the Crystallization of Amorphous Si Layers, E.F. Kennedy et al., Journal of Applied Physics, vol. 48, No. 10, Oct. 1977, pp. 4241-4246.
Novel NICE (Nitrogen Implantation Itno CMOS Gate Electrode and Source-Drain) Structure for High Reliability and High Performance 0.25 .mu.m Dual Gate CMOS, T. Kuroi et al., IEDM 93, pp. 325-328.
Ipposhi Takashi
Maeda Shigenobu
Shimizu Satoshi
Ueno Shuichi
Chaudhari Chandra
Mitsubishi Denki & Kabushiki Kaisha
Thompson Craig
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